A W-band Current Combined Power Amplifier with 14.8dBm Psat and 9.4% Maximum PAE in 65nm CMOS
This W-band power amplifier delivers up to 14.8dBm saturated output power with over 14dB power gain and better than 9.4% power added efficiency (PAE), which also achieves better than 11.6dBm output P1dB. A current power combiner is employed to combine the power from two separate PAs. The entire PA core occupies 0.106 mm2 chip area and dissipates about 200mW.
Z. Xu, Q. J. Gu, and M.-C. F. Chang, “A W-band Current Combined Power Amplifier with 14.8dBm Psat and 9.4% Maximum PAE in 65nm CMOS,” IEEE Radio Frequency Integrated Circuits Symposium (RFIC) 2011