EEC 116 - Homework 3

Do work individually.

  1. [20 pts] A processor is to be fabricated in a 0.13 μm technology on 300 mm wafers which cost $3500 each. Your company's marketing group says the die cost must be no more than $22 per chip. Assume a = 3, and there are 1.0 defects/cm^2. What is the maximum possible die size in mm^2? Show your work.

  2. [100 pts] Draw a gate-level circuit schematic (5 pts), a transistor-level circuit schematic (10 pts), and a stick diagram (10 pts) for an efficient Full Adder gate using only inverter and NOR gates, and using metal1, metal2, and metal3 (metal3 sparingly only when helpful) for routing. Layout the cell fulladder in magic and label inputs a, b, cin and outputs sum and cout and place them so the tiles can be abutted with correct operation (50 pts). Make all NMOS transistors 4 lambda wide and all PMOS 6 lambda wide, and both with minimum length channels.

    Using the magic "getcell" command, place 8 copies of the full adder cell into a new cell called add8, paint small extensions onto each input, output, Vdd, and Gnd node, and place new labels with the names a0-a7, b0-b7, sum0-sum7, cin0, cout7 (25 pts).

  3. [100 pts] Simulate the fulladder cell in irsim in one simulation with all possible input combinations and clearly show the inputs and correct outputs in an irsim output listing or waveform (40 pts). State how many combinations are correct (10 pts).

    Simulate the add8 cell in irsim in one simulation with the following input combinations and clearly show the inputs and correct outputs sum and cout7 in an irsim output listing or waveform (40 pts). State how many tests are correct (10 pts).

    a = 00000000, b = 00000000, cin0 = 0
    a = 00000000, b = 00000000, cin0 = 1
    a = 00000001, b = 00000001, cin0 = 1
    a = 00000101, b = 00001011, cin0 = 0
    a = 00000001, b = 00111111, cin0 = 0
    a = 11111111, b = 00000001, cin0 = 0
    
    Add wells, and well/substrate connections as described in lecture.

  4. [100 pts] Read Section 11.4 and design an 8x8 array multiplier (two 8-bit inputs x and y with a 16-bit output, product) using the structure shown in Figure 11.30. Do not design a Half Adder (HA) and use your Full Adder (FA) instead. When the figure shows a HA, simply use a FA and connect one of the inputs to zero (50 pts)

    Simulate the mult88 cell in irsim in one simulation with the following input combinations and clearly show the inputs and correct outputs product in an irsim output listing or waveform (40 pts). State how many tests are correct (10 pts).

    x = 00000000, y = 00000000
    x = 00001111, y = 00000000
    x = 00000000, y = 00001111
    x = 11111111, y = 00000001
    x = 00000001, y = 11111111
    x = 00001010, y = 00010100
    x = 01010101, y = 01010101
    x = 11111111, y = 11111111
    
    Add wells, and well/substrate connections as described in lecture.

  5. [3 x 10 pts] Find the Req for the following 0.25 um transistors.
    a. PMOS W = 4 lambda, L = 2 lambda, Vdd = 2.5 V
    b. Two NMOS W = 8 lambda, L = 2 lambda, Vdd = 1.5 V devices in parallel
    c. PMOS W = 15 lambda, L = 2 lambda, Vdd = 1.75 V (estimate it using a reasonable method)

  6. [20 pts] All transistors in a 0.25um CMOS 2-input NOR gate are 10 lambda wide and 2 lambda long. Calculate the input capacitance of all inputs if Cox = 6 fF/um^2

  7. [45 pts] The following gates contain PMOS transistors that are 2 times as wide as their NMOS transistors. NMOS transistors have source/drain dimensions of LS = LD = 1 µm and W = 3 µm, where LS and LD are the full source/drain length. For each, [5 pts] draw a schematic and [10 pts] write an expression for the total junction capacitance on each gate's output in terms of Cj and Cjsw
    a. Inverter
    b. 2-input NOR gate
    c. 3-input NAND gate

  8. [45 pts] The heart of the original Apple iPad is the Apple A4 chip which operates at 1.0 GHz and is believed to utilize ARM Cortex-A8 CPUs. The chip is believed to have been built with Samsung 45nm technology. Let's assume it dissipates 5 watts using a 1.0 V power supply.
    a. [10 pts] If a prototype made in 65 nm is available, what speed and power consumption will the chip likely have assuming constant-field scaling?
    b. [15 pts] If the supply voltage on the 65 nm part were scaled to 0.7 V, what will the power consumption and speed be then?
    c. [10+10 pts] i) What supply voltage should be used by the 45 nm part to set the power consumption of 2.5 Watts? ii) At what speed would the processor then operate?

  9. [30 pts] Draw a simplified circuit diagram of a clock network which clocks 5 functional units in a processor: adder, subtractor, multiplier, divider, square root. Each functional unit contains 32 flip-flops and must be designed so that its clock can be shut off to save power. The maximum fanout anywhere in the system is 4. The diagram should not show all parts of the clock system, but must include enough detail so that the structure and topology is clear.



Updates:
2012/10/24  Problems 5-9 posted
2012/10/01  Problems 1-4 posted