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EEC 210
Problem Set #7

1. GHL&M 7.1 except replace both bipolar transistors
    with n-channel MOS transistors.
    Assume that W = 100 microns, Ldrawn = 2 microns, Ld = 0.2 microns, Xd = 0,
    RS = 10 kOhms, RL = 5 kOhms, lambda = 0, k' = 60E-6 A/V**2, chi = 0,
    ID = 0.5 mA, Cdb = 0, Cgb = 0, and fT = 3 GHz (at ID = 0.5 mA).

2.  GHL&M 7.14 except replace the bipolar transistor with a n-channel MOS
    transistor and connect RL to a 10-V power supply.
    Use the same data as in Problem 1 with the following exceptions:
    a.  ID = 0.5 mA.
    b.  Cdb is not equal to 0.  Calculate the zero-bias drain-bulk
        capacitance as:
        Cdb0 = AD(Cj0') + PD(Cjsw0'), where AD = (5 microns)W and PD = W.
        Let Cj0' = 0.4 fF/(microns*microns) and Cjsw0' = 0.4 fF/micron.
	Then use Equation 1.202 with psi0 = 0.6 V to calculate Cdb.
    c.  Cox' = 0.7 fF/(microns*microns) and fT is no longer given.
    Compare your answers for Problems 1 and 2 and comment on the differences.

3.  GHL&M 7.26 except set Vsupply = 10 volts.

4.  GHL&M 7.31 except replace all bipolar transistors with n-channel
    MOS transistors.  Assume W = 100 microns, Ldrawn = 2 microns,
    Ld = 0.2 microns, Xd = 0, lambda = 0, k' = 60E-6 A/(V**2), chi = 0,
    Vt = 1 V, Cox' = 0.7 fF/(microns*microns),
    Cj0' = 0.4 fF/(microns*microns), Cjsw0' = 0.4 fF/micron,
    Use Equations 1.201 and 1.202 with psi0 = 0.6 V for all
    important junctions.  Skip parts c and d.
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