_________________________________________________________________________ EEC 210 Problem Set #7 1. GHL&M 7.1 except replace both bipolar transistors with n-channel MOS transistors. Assume that W = 100 microns, Ldrawn = 2 microns, Ld = 0.2 microns, Xd = 0, RS = 10 kOhms, RL = 5 kOhms, lambda = 0, k' = 60E-6 A/V**2, chi = 0, ID = 0.5 mA, Cdb = 0, Cgb = 0, and fT = 3 GHz (at ID = 0.5 mA). 2. GHL&M 7.14 except replace the bipolar transistor with a n-channel MOS transistor and connect RL to a 10-V power supply. Use the same data as in Problem 1 with the following exceptions: a. ID = 0.5 mA. b. Cdb is not equal to 0. Calculate the zero-bias drain-bulk capacitance as: Cdb0 = AD(Cj0') + PD(Cjsw0'), where AD = (5 microns)W and PD = W. Let Cj0' = 0.4 fF/(microns*microns) and Cjsw0' = 0.4 fF/micron. Then use Equation 1.202 with psi0 = 0.6 V to calculate Cdb. c. Cox' = 0.7 fF/(microns*microns) and fT is no longer given. Compare your answers for Problems 1 and 2 and comment on the differences. 3. GHL&M 7.26 except set Vsupply = 10 volts. 4. GHL&M 7.31 except replace all bipolar transistors with n-channel MOS transistors. Assume W = 100 microns, Ldrawn = 2 microns, Ld = 0.2 microns, Xd = 0, lambda = 0, k' = 60E-6 A/(V**2), chi = 0, Vt = 1 V, Cox' = 0.7 fF/(microns*microns), Cj0' = 0.4 fF/(microns*microns), Cjsw0' = 0.4 fF/micron, Use Equations 1.201 and 1.202 with psi0 = 0.6 V for all important junctions. Skip parts c and d. _________________________________________________________________________