HONORS AND AWARDS:
Presented a Distinguished
Senior Fellow Award, Physics Department,
Presented the Alexander von Humbolt Research Award, April 2001. The Alexander von Humboldt Foundation (AvH) grants Humboldt Research Awards annually to foreign scholars with internationally recognized academic qualifications. The award is intended as a lifelong tribute to the past academic accomplishments of award winners.
Presented the Distinguished Alumni Award for year 2001 from the California Institute of Technology. This award is the most prestigious honor presented by the Institute. This award was initiated as a part of Caltech’s 75th anniversary celebration in 1966 to recognize outstanding contributions of our alumni in business, community and professional life.
Elected a member of the National Academy of Engineering 1999. Dr. Robert W. Bower,
Election to the National Academy of Engineering is among the highest professional distinctions accorded an engineer. Academy membership honors those who have made "important contributions to engineering theory and practice, including significant contributions to the literature of engineering theory and practice," and those who have demonstrated "unusual accomplishment in the pioneering of new and developing fields of technology."
In 1997, I was inducted as a member of the National Inventors Hall of Fame, for my invention of the self-aligned-gate ion-implanted MOSFET. The National Inventors Hall of Fame had only previously inducted about 130 members including such well know inventors as Edison, Bell, Steinmetz, Fermi, Pasteur, Tesla, Land, Ford, Marconi and Westinghouse. In the field of semiconductor devices and technology only five inventors (related to two inventions) had been previously inducted: Bardeen, Bratten and Schockley for the transistor and Kilby and Noyce for the integrated circuit.
In 1997 the Commerce Department of the United States Government presented Robert W. Bower with the Ronald H. Brown American Innovator Award.
Elected a Fellow of the IEEE in 1986, "For inventing the self-aligned gate ion implanted MOSFET and for establishing ion implantation to fabricate semiconductor integrated circuits”.
Paper selected as the most significant device paper of the 1966 International Electron Device Meeting (IEDM), “Insulated Gate Field Effect Transistors Fabricated Using the Gate as Source-Drain Mask”. This device is used by the millions in virtually all modern integrated circuits is known as the Self-Aligned Gate (SAG) MOSFET. This appeared in the special 40th Anniversary Commemorative Edition of the IEDM where the most significant and interesting papers of the last 40 years were chosen from 1955 through 1994.
Member: Phi Beta Kappa, Sigma Xi, American Association for the Advancement of Science, American Physical Society.
Scientific Member: Boehmische Physical Society