Robert W. Bower

 

Dr. Bower received his A.B. in Physics (1962) from the University of California at Berkeley, M.S.E.E. (1963) and Ph.D. (1973) in Applied Physics from The California Institute of Technology.  He has worked more than 25 years in industry where he served in a number of capacities including that of engineer, scientist, Dept. head, division manager, president and CEO.  He has served 15 years as Professor at the University of California.    Dr. Bower has more than 80 journal and conference papers and 28 patents and the author of chapters in 3 books.

 

He is currently President of Integrated Vertical Modules, President and CEO of Device Concept Inc. and Professor Emeritus at the University of California.  IVM is a new venture whose focus is three dimensional, high density solid structures.  Device Concept Inc. is a consulting firm with focus on semiconductor technology and patent expertise.  17 law firms have retained him where he has served as an expert witness in patent litigation cases.  His professional interests include three-dimensional microstructures, silicon on insulator technology, semiconductor devices, solid-state sensors and actuators, direct bonding.

 

Honors and Awards

 

Presented a Distinguished Senior Fellow Award, Physics Department, Queens University, Belfast. (2003)  Granted to Researchers with an international reputation in areas of research in Physics at Queens University.

 

Presented the Alexander von Humboldt Award, April 2001.  The Alexander von Humboldt Foundation (AvH) grants Humboldt Research Awards annually to foreign scholars with internationally recognized academic qualifications. The award is intended as a lifelong tribute to the past academic accomplishments of award winners. 

 

Presented the Distinguished Alumi Award for year 2001 from the California Institute of Technology.  This award is the most prestigious honor presented by the Institute. 

 

Elected a member of the National Academy of Engineering 1999. Dr. Robert W. Bower, Elected Feb. 16, 1999.  Election to the National Academy of Engineering is among the highest professional distinctions accorded an engineer.

 

In 1997 inducted as a member of the National Inventors Hall of Fame, for my invention of the self-aligned-gate ion-implanted MOSFET. 

 

In 1997 the Commerce Department of the United States Government presented Robert W. Bower with the Ronald H. Brown American Innovator Award.

 

Elected a Fellow of the IEEE in 1986, "For inventing the self-aligned gate ion implanted MOSFET and for establishing ion implantation to fabricate semiconductor integrated circuits”.

 

Paper selected as the most significant device paper of the 1966 International Electron Device Meeting (IEDM), “Insulated Gate Field Effect Transistors Fabricated Using the Gate as Source-Drain Mask”. 


 

Selected Recent Papers

 

  1. Robert W. Bower, Louis LeBoeuf and Y. Albert Li, "Transposed Splitting of Silicon Implanted with Spatially Offset Distributions of Hydrogen and Boron".   Publiblished,   Il Nuovo Cimento Dec 1997, Vol. 19 D, N. 12, pp 1871-1873.

 

 

  1. Jean-Pierre Colinge and Robert W. Bower, Guest Editors “Silicon-On-Insulator Technology”, Invited Special edition of the MRS Bulletin Dec. 1998.

 

  1. Q.Y.Tong and R. Bower "Recent advances in Smart-Cut technology" Duke U., Bell Labs and UC Davis, Invited Special edition MRS Bulletin Dec. 1998.

 

  1. Robert W. Bower, U. S.-Finland Workshop on Microstructuring Science and Technology, Hotel Haikko Manor, Porvoo, Finland Aug. 5-7, 1998. Elements of Three Dimensional Microstructure Technologies.

 

  1. Robert W. Bower, Fifth International Conference on Solid-State and Integrated-Circuit Technology, Oct. 21-23, 1998 Beijing, China, 3-Dimensional microelectronic integration. Pp 741-744.

 

  1. K.K. Vossough, R.W. Bower, J-P. Colinge, "Electron field emission from silicon and polysilicon surfaces", International Vacuum Microelectronics Conference Technical Digest, p. 156-157, July 6-9, 1999.

 

  1. K.K. Vossough, R.W. Bower, J-P. Colinge, "Electron field emission from polysilicon tips and flat surfaces", International Vacuum Microelectronics Conference Technical Digest, p.144, July 6-9, 1999.

 

  1. Hochbauer, T.; Waiter, K.C.; Sohwarz, R.B.; Nastasi, M.A.; Bower, R.W.; Ensinger, W.A. “The influence of boron ion implantation on hydrogen blister formation in n-type silicon.” Journal of Applied Physics, vol.86, (no.8), AIP, 15 Oct. 1999. p.4176

 

  1. Y. A. Li & R. W. Bower, “Surface Conditions and Morphology of Hydrogen Ion Cut Low Temperature Bonded Thin Film Layers”, Japanese Journal of Applied Physics.  Part 1, No. 1, January 2000,pp 275-276.

 

  1. K.K. Vossough, R.W. Bower, J-P. Colinge, "Electron  field emission from polycrystalline silicon tips", J. of Vac. Sci. Tech. B, Accepted for Publication Jan. 2000.

 

  1. R. R. D. Verda, C. J. Maggiore, J. R. Tesmer, A. Misra, M. A. Nastasi, and R. W. Bower,  “Depth Profiling of Hydrogen in Crystalline Silicon using Elastic Recoil Detection Analysis”, Accepted for publication in Nuclear Instruments and Methods in Physics, 2001, Research, Section B:  Beam Interactions with Materials and Atoms.

 

  1. R. D. Verda, J. R. Tesmer, C. J. Maggiore, M. A. Nastasi, and R. W. Bower, "Geometric considerations relevant to hydrogen depth profiling by reflection elastic recoil detection analysis” , Accepted for publication in Nuclear Instruments and Methods in Physics, 2001, Research, Section B:  Beam Interactions with Materials and Atoms.

13.  Verda RD, Tesmer JR, Nastasi M, Bower RW. An energy spread correction for depth profiling by elastic recoil detection analysis. [Journal Paper] Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials & Atoms, vol.187, no.3, March 2002, pp.383-92. Publisher: Elsevier, Netherlands.

14.  Verda RD, Tesmer JR, Nastasi M, Bower RW. Accurate hydrogen depth profiling by reflection elastic recoil detection analysis. [Conference Paper] Elsevier. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials & Atoms, vol.190, May 2002, pp.419-22. Netherlands.

 

Recent Patents

 

  1. R. W. Bower and M. S. Ismail.  ALIGNED WAFER BONDING.  Patent U.S. 5,226,118, issued August 17, 1993.

 

  1. R. W. Bower and M. S. Ismail.  DIGITAL PRESSURE SWITCH FORMED BY ALIGNED WAFER BONDING.  Patent U.S. 5,294,760, issued March 15, 1994.

 

  1. R. W. Bower and M. S. Ismail.  NITROGEN BASED LOW TEMPERATURE DIRECT BONDING.  Filed June 23, 1992, Issued  April 2, 1996, patent U. S. 5,503,704.

 

  1. Robert W. Bower, Transposed Split of Ion Cut Materials, Provisional Filed Dec. 31, 1998, Issued February 12, 2002, patent U. S. 6,346,458 B1.