A Low-Power, High-Performance, 1024-Point FFT Processor

Bevan M. Baas
Department of Electrical Engineering
Stanford University
Stanford, CA

Abstract:

This paper presents an energy-efficient, single-chip, 1024-point fast Fourier transform (FFT) processor. The 460,000-transistor design has been fabricated in a standard 0.7 μm (Lpoly = 0.6 μm) CMOS process and is fully functional on firstpass silicon. At a supply voltage of 1.1 V, it calculates a 1024-point complex FFT in 330 μs while consuming 9.5 mW, resulting in an adjusted energy efficiency more than 16 times greater than the previously most efficient known FFT processor. At 3.3 V, it operates at 173 MHz--which is a clock rate 2.6 times greater than the previously fastest rate.

Paper

Reference

Bevan M. Baas, "A Low-Power, High-Performance, 1024-Point FFT Processor," IEEE Journal of Solid-State Circuits, vol. 34, no. 3, pp. 380–387, March 1999.

BibTeX Entry

@article{baas:jssc:1999,
   author    = {Bevan M. Baas},
   title     = {A Low-Power, High-Performance, 1024-Point {FFT} Processor),
   journal   = {IEEE Journal of Solid-State Circuits},
   month     = mar,
   year      = 1999,
   volume    = 34,
   number    = 3,
   pages     = {380--387}
   }

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