50 MISIM, a model-independent circuit simulation tool

(from Bardo Muller <bardo@ief-paris-sud.fr>)

University of Washington has recently released the updated MISIM simulator. The new release (Sun version) is now available through ftp with anonymous login. The node address is 128.95.31.10. The release is under /pub/misim.SUN.2.3.a. If you have any question, please don't hesitate to contact us (misim_support@ee.washington.edu). Or, you can contact Prof. Andrew Yang at 206-543-2932.

Attention: ---------

We are currently re-writing the whole MISIM system in C with broader design consideration. The noise and temperature simulation capability will be incorporated into our next release. It would have more flexible front end with better simulation performance. The new version is expected sometime around the end of this summer. Since the actual release no longer reflected the level of our technology, we removed it from our ftp directory.

                               MISIM Development Team
                               Department of Electrical Engineering
                               University of Washington
            MISIM 2.3A Release:  General Information
           ------------------------------------------ 
MISIM 2.3A is distinguishable from the previous release in that is now integrates a transistor-level mixed analog-digital simulator based on analytical digital macromodeling. The mixed-signal simulator is equipped with a front-end translator which accepts standard SPICE netlist syntax and converts it into MISIM mixed-mode syntax. Analytic macromodels for digital subcircuits are generated and loaded into MISIM core simulator automatically. Synchronized simulation is then performed for the digital subcircuits (processed by analytic solution) and the analog subcircuits (processed by proven analog simulation algorithms) with much accelerated speed and superior analog accuracy ( within 3-5 % of SPICE).

The MISIM mixed-signal simulator supports all standard Berkeley MOS model (Level 1, 2, 3, BSIM 1, BSIM 2). User-defined MOS models of arbitrary complexity are also supported.

Currently, the procedure of processing analytic digital macromodeling cannot be applied to bipolar devices (G-P model). Hence, all bipolar transistors will be simulated as "analog" components.

MISIM's X-window graphic environment, WISE, has been upgraded to support the mixed-signal simulation capabilities.

B) Model Improvements: ------------------

MISIM 2.3A now supports improved SPICE models (MOS, Diode, BJT). Many of the model discontinuities have been resolved leading to more reliable simulation. The MOS Level 2 and Level 3 models have also been upgraded to an improved charge-conserved models. The standard SPICE diode model has been enhanced to a non-quasi-static model capable of simulating accurately the diode recovery effect.

These improved SPICE models are released as linked models. Users are not recommeded to unload these improved models.

C) A New Parser: ------------

MISIM 2.3A incorporates a new netlist parser which supports two different modes:

1) Standard SPICE netlist syntax - default mode. 2) Enhanced SPICE netlist syntax - MISIM mode.

This new capability is designed to make MISIM completely spice-compatible. In addition, the new parser now handles symbolic names and expressions.

D) Updated Documentations: ----------------------

An updated MISIM User's guide is available in postcript form. On-line documentations is also provided.

E) Future Release (MISIM 3.0): --------------------------

1) The next release will include a new C-version analog simulator which has been benchmarked to be a factor of 2 to 3 times faster than the current fortran version.

2) The mixed-signal simulator will be enhanced to improve digital coverage rate (percentage of a mixed A/D circuit which can be processed by the analytic digital macromodel) for better simulation performance.

This document was translated by ms2html v1.7 on 16.01.97. OMN

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