Robert W. Bower
- Ph.D. in Applied Physics, California Institute of Technology, 1973
- M.S. in Electrical Engineering, California Institute of Technology, 1963
- AB Honors Physics, University of California, Berkeley, 1962
- President and CEO of Device Concept Inc., 1995-Present
- Expert witness in device physics and high technology patent cases before federal court of the U.S.A., 1994-Present
- Emeritus Professor, University of California, Davis. Research activities a variety of Ion Cut technologies and structures, in three-dimensional microstructures, semiconductor devices, solid-state sensors and actuators. Direct Bonding and SOI, 2000-Present
- Distinguished Visiting Fellow, Physics Dept. Queens University, Belfast University, 2003-Present
- Member of the Strategy Advisory Board EPIR Technologies, 2008-Present
- Senior Director Product Innovation, EPIR Technologies, 2009-2011
- Professor, Electrical and Computer Engineering Department. University of California, Davis. Research activities a variety of Ion Cut structures and Technologies, in three-dimensional microstructures, semiconductor devices, solid-state sensors and actuators. Direct Bonding and SOI, 1987-2000
- President of Bower Technology Inc. (BTI), 2003-2008
- Visiting Professor-Technical university of Munich. Research in biosensors and recrystallized silicon, 1986-1987
- Advanced Micro Devices Inc. Served as a Senior Scientist and Manager of Bipolar Device Technology. In this capacity responsible for all new technology and design development and responsible for maintaining yield, reliability and performance standards on existing products in the division. Earlier work in the MOS division included manager of flash and redundancy technologies and development of nonvolatile RAMS, 1979-1985
- Associate Professor, Electrical Science and Engineering Department, UCLA. Taught courses in circuit theory, semiconductor devices physics and VLSI methodology, 1977-1978
- Mnemonics Inc.-General Partner, Vice President and then President of this CCD memory systems company. This company developed the first 64k CCD memory chips, 1975-1977
- Consultant to TRW, Intel, Honeywell, GCA, AMD, Xerox, Hughes, U.S. Army, Universal Design, Nitron, Motorola, Datapoint, ITT, High Voltage Engineering and Eurocil. this consulting work spanned the areas of metal-semiconductor reliability, ion implantation, MOS memories, CMOS, silicon gate processing and CCD development, 1970-1975
- Hughes A.C. Assistant Division Manager, MOS Division. Directed engineering and assisted in building MOS business at Hughes, which grew to be the most successful division in this billion-dollar corporation. Manager of the Applied Solid State Research Department of the Hughes Research laboratories. Directed all MOS, Microwave Solid State and Ion Implantation activities. Work in this department led to the commercial use of ion implantation in semiconductor processing. This work provided Hughes with a leadership position in CMOS watch circuitry that allowed them to become the largest producer of watch circuits in the world. The work resulting in the self-aligned gate ion implanted MOSFET was accomplished in this department, 1965-1970
Three-dimensional microstructures, conventional electronic devices, optoelectronic structures, heterostructures, integrated sensors, actuators, and PV solar cells
Professor Bower is working on a class of three-dimensional mi crostructures that utilize techniques called aligned microdevice bonding and low-temperature direct bonding. Bower is interested in the analysis, fabrication and characterization of materials, and is also involved in novel solar cell devices. These studies include silicides, diamond and diamond-like carbon materials.
Honors and Awards
- Member of the National Academy of Engineering
- Member of the National Inventors Hall of Fame
- Recipient of the Ronald H. Brown, American Innovators Award
- Recipient of the California Institute of Technology Distinguished Alumni Award
- Recipient of the Alexander von Humboldt-Stiftung
- Life Fellow of the IEEE
- Fellow American Physical Society
- Member Hall of Scientists and Inventors
- Scientific Member: Boehmische Physical Society
- Member Semiconductor Hall of Fame
- Member: Phi Beta Kappa, Sigma Xi, American Association for the Advancement of Science
- R. W. Bower and H. G. Dill INSULATED GATE FIELD EFFECT TRANSISTORS FABRICATED USING THE GATE AS SOURCE-DRAIN MASK, Paper 16.6 International Electron Device Meeting, Washington, D.C., 1966.
- R. W. Bower, DEVICE CONSIDERATIONS AND APPLICATIONS – Ion Implantation in Semiconductors, Academic Press, Chapter 6, pp. 224-249, 1970.
- R. W. Bower, T. A. Zimmerman and A. M. Mohsen. A HIGH DENSITY OVERLAPPING GATE CHARGE COUPLED DEVICE ARRAY Paper 2.6, IEEE International Electron Devices Meeting, Oct. 1973.
- R. W. Bower. CHARACTERISTICS OF ALUMINUM-TITANIUM ELECTRICAL CONTACTS ON SILICON. Appl. Phys. Lett., Vol. 23, No. 2, pp. 99-101, 1973
- A. M. Mohsen, R. W. Bower, and T. C. McGill. ‘Overlapping-Gate Buried-Channel Charge-Coupled Devices’, Electronics Letters, Vol. 9, No. 17, pp. 396-398. 1974.
- R. W. Bower, M. S. Ismail and S. N. Farrens. “Aligned Wafer Bonding: A Key to Three-Dimensional Microstructures”, Journal of Electronics Materials, Vol. 20, No. 5, pp. 383-387. June 1991.
- R. W. Bower, M. S. Ismail and B. E. Roberds, ‘Low Temperature Si3N4 Direct Bonding’. Published in Appl. Phys. Lett., 28 June 1993 pp. 2485-3487
R. W. Bower. FIELD-EFFECT DEVICE WITH INSULATED GATE. Patent, U.S. 3,472,712, issued October 14, 1969. (This is the basic patent describing the self aligned-gate MOSFET)
R. W. Bower. ASYMMETRICAL WELL CHARGE COUPLED DEVICE. Patent U.S. 3,967,306, issued June 29, 1975.
R. W. Bower and M. S. Ismail. ALIGNED WAFER BONDING. Patent U.S. 5,236,118, filed May 12, 1992 issued August 17, 1993.
R. W. Bower and M. S. Ismail. NITROGEN BASED LOW TEMPERATURE DIRECT BONDING. filed June 23, 1992, Issued April 2, 1996, patent U. S. 5,503,704
Robert W. Bower, Smooth Thin Film Layers Produced by Low Temperature Hydrogen Ion Cut, U.S. Patent 7,094,667 B1, filed May 5, 2003, issued Aug. 22, 2006