From III-Vs and II-VIs to Carbon Electronics: Semiconductor Devices and Electronics for Microwave to THz Communications and Sensing
Tuesday, May 15, Kemper Hall 1003, 10:00am-11:00am
Speaker: Dimitris Pavlidis
Professor of Electrical Engineering and Information Technology
Director of International Relations
Institute of Electronics, Microelectronics and Nanotechnology (IEMN) - UMR-8520
Villeneuve d’Ascq/Lille, France
Wide bandgap semiconductors, such as III-Nitrides and II-VIs, offer unique electronic and optical properties that make them suitable for a variety of applications ranging from communications to sensing. Components made with these materials operate from microwave-to millimeter-wave and THz frequencies. They can also produce sensors and display control electronics with unique properties. Carbon-based devices, such as carbon nanotubes and graphene, have also emerged in recent years and demonstrate attractive features for future generations of electronics. Nanostructuring permits device optimization via control of properties such as the bandgap, dimensionality and transport characteristics. Moreover, nanowire-based devices play a major role in future nano-bio applications thanks to their very high sensitivity and nanoscale resolution capability. Signal generation and detection is particularly challenging at very high frequencies and new two- and three-terminal device approaches are being explored for this purpose. The talk will review various electronic device approaches, based on material, design, circuit implementation, processing and characterization considerations. These concepts pave the way to new families of components capable of responding to future electronic needs in the microwave to THz frequency regime.
Dimitris Pavlidis (S'73-M'76-SM'83-F'93) has been Professor at Darmstadt University of Technology, Germany and Director of External Relations of the Institute of Electronics, Microelectronics and Nanotechnology (IEMN), Lille, France since 2003. He has been Professor (1986 to 2004) and Adjunct Professor (2004 to present) of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor, Michigan.
During 1980-1985 he was Engineer and Manager of the GaAs Monolithic Microwave Integrated Circuits (MMIC) Department of Thomson-CSF, Corbeville, France. In this capacity he was responsible for projects on various III-V semiconductor monolithic circuits, their technology and process evaluation. He was a Visiting Scientist of the Centre National d'Études des Télécommunications (CNET)/France Telecom in Bagneux, France (1993) and a Visiting Professor at the University of Hokkaido, Sapporo Japan (1992), Meijo University, Nagoya, Japan (2000) and the University of Western Australia, Perth, Australia (2000).
His research involves various types of semiconductor materials, devices, circuits, nanostructures and sensors with operation frequency extending from microwaves to millimeter-waves and THz. Since 1986 he has been involved in research on heterostructure devices and materials. This includes the design, fabrication and characterization of HEMT's (GaAs, InP and GaN-based), HBT's (GaAs, InP, Sb-based), diodes for switching and mixing (GaAs and InP-based) and two-terminal devices for microwave and THz signal generation based on fundamental oscillation and multiplication approaches. His research also covers microwave/ millimeter-wave monolithic heterostructure integrated circuits built with such devices, III-V MEMS and sensors. His materials research covers InP, III-V Nitride and II-VI (oxides) based heterostructures using Metalorganic Chemical Vapor Deposition (MOCVD) and their device applications. His work in the above areas has been reported in numerous papers and reports and he holds eight patents.
Professor Pavlidis was awarded in 1990 the European Microwave prize for his work in InP based monolithic integrated HEMT amplifiers. In 1991 he received the decoration of "Palmes Académiques" in the order of Chevalier by the French Ministry of Education for his work in education. In 1992 and 1999 he received the Japan Society of Promotion of Science Fellowship for Senior Scientists/Professors from the Japanese Government and in 1992 the Humbolt Research Award for Distinguished senior US Scientists. He is the recipient of the University of Michigan 1994 Electrical Engineering and Computer Science and 1996 College of Engineering Research Excellence Awards and co-recipient of the 2005 GAAS European Microwave Week Award for his work on wideband GaN-based MMIC low-noise amplifiers for transceiver Front-ends. He has been responsible for initiating and directing various international programs involving research and academic partnerships between European and US, Singapore and China universities. Funding for these programs was provided by the European Commission and the Department of Education and/or Research of the partner countries. He has chaired and co-chaired several international conferences and was the General TPC Chair of the European Microwave Week, 2010.