Novel Electronic Devices Based on Graphene Heterostructures

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Monday, April 25, 1065 Kemper Hall, 11:00am-12:00pm

Speaker: Cory R. Dean
Postdoctoral Researcher, Department of Physics, Columbia University

Host: Professor Richard Kiehl

Abstract:

A continuing challenge in the study of graphene remains fabrication of ultra-high mobility devices so that its intrinsic characteristics can be fully explored. In my talk I will discuss our recent breakthrough advancement in fabricating very-high quality graphene devices on boron nitride, realized by precision transfer of mechanically exfoliated graphene and single crystal h-BN flakes. Owing to its large bandgap, chemical inertness, hexagonal lattice structure (with only 2% lattice mismatch to graphene), planar (i.e. atomically flat) surface structure and good dielectric properties, we demonstrate that single crystal h-BN is an ideal supporting substrate in the effort towards realizing improved graphene FET devices. Recent progress in graphene performance realized by fabricating multi-layer graphene/h-BN heterostructures will be discussed. Additionally I will present some new device structures and applications we are pursuing with this promising new technology.

Biography:

Cory R. DeanCory Dean is a postdoctoral researcher at Columbia University appointed between the departments of Electrical Engineering and Mechanical Engineering. In 2009 he earned is PhD in Physics at McGill University in Montreal, where he studied the fractional quantum Hall effect in ultrahigh mobility GaAs heterostructures. Previously he earned a Master?s in Physics at Queen?s University in Ontario, Canada, where he studied materials science, thin film growth and characterization and graphite intercalation compounds. Currently, Cory is studying the electrical properties of single and bilayer graphene heterostructures.