GaN Nanowires: Growth, Optical, and Electronics Properties

November 16, 2007
Alec Talin, Sandia National Laboratories, Livermore, California

Interest in group III-N nanowires is motivated by the high crystalline quality, the attractive optoelectronic properties of the material system, and the potential of integrating these nanostructures with a Si platform. Possible device applications include vertical arrays of nanoscale lasers and high electron mobility transistors. Despite numerous reports on the growth, however, few studies have systematically investigated the optical and electrical properties of GaN nanowires, and how these relate to growth conditions. In my talk, I will describe the properties of GaN nanowires synthesized by either metal catalyzed or lithographically directed growth techniques, using a platform optimized for combined electrical and optical characterization of nanostructures. I will show how conductivity, photoluminescence, and Raman scattering can be correlated with the growth conditions, and the implications that these results have for practical device realization as well as for fundamental understanding of defects in GaN. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company for the United States Department of Energys National Nuclear Security Administration under contract DE-AC04-94AL85000.

Dr. Talin received his Ph.D. in Materials Science at UCLA under Prof. Stan Williams in 1995 working on ballistic electron transport. In 1996 he joined Motorola Corporate Labs in Phoenix, AZ, in 1996, where he worked on flat panel display technology, thin film growth, and managed the materials characterization laboratory. Since 2002 he has been a principal member of technical staff at Sandia. Dr. Talin has co-authored over 60 refereed papers and has been awarded 18 US patents, on subject ranging from display technology, contact metallurgy, heteroepitaxy, and advanced lithography.