ECE Header Logo

EEC240 – Semiconductor Devices

3 units – Winter Quarter

Lecture: 3 hours

Prerequisite: EEC 140B

Grading: Letter; homework (10%),  midterm (35%), final (55%).

Catalog Description:

Physical principles, characteristics and models of various semiconductor devices including: P-N junction and metal-insulator-semiconductor diodes, junction and insulated gated field effect transistors.

Expanded Course Description:

  1. Unipolar Devices
    1. Metal-Insulator-Semiconductor Diodes
      1. Introduction
      2. Ideal Metal-Insulator-Semiconductor (MIS) Diode
      3. Surface States, Surface Charges, and Space Charges
      4. Effect of Metal Work Function, Crystal Orientation,Temperature, Illumination, and Radiation on MIS Characteristics.
    2. Insulated Gate Field Effect Transistors
      1. Introduction
      2. Surface-Space-Charge Region Under Nonequilibrium Condition
      3. Channel Conductance
      4. Basic Device Characteristics
      5. Device Models
      6. Floating Gate Devices
    3. Metal-Semiconductor Diodes
      1. Introduction
      2. Schottky Effect
      3. Energy Band Relation at Metal-Semiconductor Contact
      4. Current Transport Theory in Schottky Barriers
      5. Measurement of Schottky Barrier Height
    4. Metal-Semiconductor Field Effect Transistors
    5. Junction Field Effect Devices
  2. Bipolar Devices
    1. P-N Junctions
      1. Basic device theory
      2. Current-Voltage Characteristics
      3. Capacitance-Voltage relationships
      4. Terminal Functions
    2. Bipolar Transistors
      1. Introduction
      2. Basic Device Theory
      3. Current-Voltage Characteristics
      4. Drift assisted Transport.
      5. Device Models including Ebers-Moll and Gummel-Poon
  3. Photonic Devices
    1. Light-Emitting Diode
    2. Photovoltaics and Solar Cells
    3. Optical Photodetectors

Textbook/reading:

  1. Michael Shur, Physics of Semiconductor Devices, Prentice Hall 1990. Supplemented by handout materials

Engineering Design Statement:

This course examines models of semiconductor devices, but does not incorporate their use in design projects. The course is not intended as a design class.

ABET Category Content:

Engineering Science: 3 credits
Engineering Design: 0 credits

Instructors: Bower, Colinge, Haley, Hunt, Smith

THIS COURSE DOES NOT DUPLICATE ANY EXISTING COURSE.

Last revised: January 1998
ECD revised: March 1998