3 units – Winter Quarter
Lecture: 3 hours
Prerequisite: courses 132C and 210
Grading: Letter; three projects (60%), final exam (40%).
Radio frequency (RF) solid-state devices, RF device modeling and design rules; nonlinear RF circuit design techniques; use of nonlinear computer-aided (CAD) tools; RF power amplifier design.
Students will gain the fundamentals of RF IC design and be familiarized with RF IC design rules and nonlinear computer-aided design tools.
Expanded Course Description:
Stephen A. Maas, Nonlinear Microwave Circuits, IEEE Press, New York, 1997.
Steve C. Cripps, RF Power Amplifiers for Wireless Communications, Artech House, Massachusetts, 1999.
Thomas H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, Cambridge University Press, United Kingdom, 1998.
Instructor: Anh-Vu Pham
This graduate course covers practical RF circuit-level implementations of functional blocks for RF front-ends, especially transmitters. It exposes the students to RF IC design, nonlinear design techniques, RF power amplifier design, and the transmitter side of a RF front-end. Course 228 and 211 cover noise analysis and some complementary RF circuits such as low-noise amplifiers and receivers without overlap.
Last revised: 3/04