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EEC219 – Advanced Digital Circuit Design

3 units – Spring Quarter

Lecture: 3 hours

Prerequisite: EEC 118 or EEC 218A

Grading: Letter; homework, design project, midterm and final exams.

Catalog Description:

Analysis and design of digital circuits. Both bipolar and MOS circuits are covered. Dynamic and static RAM cells and sense amplifiers. Advanced MOS families. Multi-valued logic.

Expanded Course Description:

  1. Bipolar logic (12 hours)
    1. TTL Gates
      1. voltage transfer characteristic (VTC)
      2. charge control analysis of bipolar circuits
      3. gate delay estimation based on charge control
    2. Improved TTL – 74S, 74LS
    3. ECL VTC and delay analysis
    4. I2L VTC and delay analysis
  2. Basic MOS (6 hours)
    1. Delay through cascaded stages, optimal W/L, parasitics
    2. Dynamic and static RAM cells, sense amps
    3. Analysis of regenerative circuits
    4. Scaling dimensions, effect on performance, modeling concerns
  3. Advanced MOS (6 hours)
    1. DCVS (Differential cascade voltage switch) logic
    2. Other new logic approaches
    3. Non-overlapping clocks, clock skew in large IC’s
  4. Other topics (3 hours)
    1. Multi-valued logic
    2. VLSI signal processing architectures
    3. BICMOS processes
    4. Asynchronous (self-timed) logic
  5. Review, testing, and discussion of tests. (3 hours)

Textbook/reading:

  1. Hodges and Jackson, Analysis and Design of Digital Integrated Circuits, 2nd Edition, McGraw-Hill, 1988.

Instructors: Staff

THIS COURSE DOES NOT DUPLICATE ANY EXISTING COURSE.

Last revised: August 1990