Under the sponsorship of Bruker AXS, Inc., the UC Davis Vacuum Microelectronic Team are undertaking the task of inventing a novel and innovative high-resolution X-ray imaging detector using Field Emission Array (FEA) technology. The
objective of this research is to design, fabricate, and test the second phase of the Bruker X-ray detection project, using highly-planar, gated, photosensitive, (FEA) photocathode.
The gated FEAs are fabricated using subtractive etching techniques and include Chemo-Mechanical-Polishing for a planar-gate surface. The advantages of implementing a planar-gate include higher spatial resolution, enhanced dynamic range, reduced gate-cathode
capacitance, and a lower turn-on voltage (which reduces the chance of damage being caused by high-voltage dielectric breakdown.) Previous planar, gated designs from other FEA groups [1], [2] show promising results, but have certain deficiencies. This design of gated-FEA photocathode has the potential advantages
of a planar gate surface, and can alleviate problems associated with non-self-aligned gate openings and uneven fabrication over a large-area array.